View 74HC1G66GW_390192.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

INTEGRATED CIRCUITS
DATA SHEET
74HC1G66; 74HCT1G66 Bilateral switch
Product specification File under Integrated Circuits, IC06 1998 Aug 03
Philips Semiconductors
Product specification
Bilateral switch
FEATURES * Wide operating voltage range: 2.0 to 9.0 V * Very low ON resistance 45 (TYP.) at VCC = 4.5 V 30 (TYP.) at VCC = 6.0 V 25 (TYP.) at VCC = 9.0 V * High noise immunity * Low power dissipation * Very small 5 pins package * Output capability: non standard. DESCRIPTION The 74HC1G/HCT1G66 is a high-speed Si-gate CMOS device. The 74HC1G/HCT1G66 provides an analog switch. The switch has two input/output terminals (Y, Z) and an active HIGH enable input (E). When E is LOW, the analog switch is turned off. The non standard output currents are equal compared to the 74HC/HCT4066. FUNCTION TABLE INPUTS L H Note 1. H = HIGH voltage level; L = LOW voltage level. E(1) SWITCH OFF ON PINNING PIN 1 2 3 4 5 SYMBOL Y Z GND E VCC CS Notes QUICK REFERENCE DATA GND = 0 V; Tamb = 25 C; tr = tf = 6.0 ns.
74HC1G66; 74HCT1G66
TYP. SYMBOL tPZH/tPZL tPHZ/tPLZ CI CPD PARAMETER turn-on time E to Vos turn-off time E to Vos input capacitance power dissipation capacitance max. switch capacitance notes 1 and 2 CONDITIONS HC1G CL = 15 pF RL = 1 k VCC = 5 V 11 11 1.5 9 HCT1G 12 12 1.5 9 ns ns pF pF UNIT
8
8
pF
1. CPD is used to determine the dynamic power dissipation (PD in W). PD = CPD x VCC2 x fi + ((CL +CS)x VCC2 x fo) where: fi = input frequency in MHz; fo = output frequency in MHz; CL = output load capacitance in pF; CS = max. switch capacitance in pF; VCC = supply voltage in V; ((CL +CS)x VCC2 x fo) = sum of outputs. 2. For HC1G the condition is VI = GND to VCC. For HCT1G the condition is VI = GND to VCC - 1.5 V.
DESCRIPTION independent input/output independent input/output ground (0 V) enable input (active HIGH) DC positive supply voltage
1998 Aug 03
2
Philips Semiconductors
Product specification
Bilateral switch
ORDERING INFORMATION PACKAGE OUTSIDE NORTH AMERICA 74HC1G66GW 74HCT1G66GW TEMPERATURE RANGE -40 to +125 C PINS 5 5 PACKAGE SC-88A SC-88A MATERIAL plastic plastic
74HC1G66; 74HCT1G66
CODE SOT353 SOT353
MARKING HL TL
handbook, halfpage
Y1 Z2 GND 3
MNA074
5 VCC
handbook, halfpage
66
4 E
4
Y E Z
1 2
MNA075
Fig.1 Pin configuration.
Fig.2 Logic symbol.
handbook, halfpage
Y
E
handbook, halfpage
1 4#
1 1 X1
MNA076
2 VCC VCC
GND
Z
MNA077
Fig.3 IEC logic symbol.
Fig.4 Logic diagram.
1998 Aug 03
3
Philips Semiconductors
Product specification
Bilateral switch
RECOMMENDED OPERATING CONDITIONS 74HC1G66 SYMBOL VCC VI VS Tamb PARAMETER MIN. DC supply voltage DC input voltage range DC switch voltage range operating ambient temperature range input rise and fall times except for Schmitt-trigger inputs 2.0 GND GND -40 TYP. 5.0 - - - MAX. 10.0 VCC VCC +125 MIN. 4.5 GND GND -40 TYP. 5.0 - - - MAX. 5.5 VCC VCC +125 V V V C 74HCT1G66 UNIT
74HC1G66; 74HCT1G66
CONDITIONS
see DC and AC characteristics per device VCC = 2.0 V VCC = 4.5 V VCC = 6.0 V VCC = 10.0 V
tr,tf
- - - -
- 6.0 - -
1000 500 400 250
- - - -
- 6.0 - -
- 500 - -
ns ns ns ns
LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134); voltages are referenced to GND (ground = 0 V); see note 1. SYMBOL VCC IIK ISK IS ICC Tstg PD PS Note 1. To avoid drawing VCC current out of terminal Z, when switch current flows in terminal Y, the voltage drop across the bidirectional switch must not exceed 0.4 V. If the switch current flows into terminal Z, no VCC current will flow out of terminal Y. In this case there is no limit for the voltage drop across the switch, but the voltage at Y and Z may not exceed VCC or GND. PARAMETER DC supply voltage DC digital input diode current DC switch diode current DC switch output current DC VCC or GND current storage temperature power dissipation per package for temperature range: -40 to + 125 C; 5 pins plastic SC88A power dissipation per switch above +55 C derate linearly with 2.5 mW/K - 100 mW VI < - 0.5 or VI > VCC + 0.5 V VS < - 0.5 or VS > VCC + 0.5 V -0.5V < VS < VCC + 0.5 V CONDITIONS MIN. -0.5 - - - - -65 - MAX. 11.0 20 20 25 50 +150 200 UNIT V mA mA mA mA C mW
1998 Aug 03
4
Philips Semiconductors
Product specification
Bilateral switch
DC CHARACTERISTICS FOR THE 74HC1G66 Over recommended operating conditions.; voltages are referenced to GND (ground = 0 V). Tamb (C) SYMBOL PARAMETER MIN. VIH HIGH-level input voltage 1.5 3.15 4.2 6.3 VIL LOW-level input voltage - - - - II IS input leakage current analog switch OFF-state current analog switch ON-state current quiescent supply current - - - -40 to +85 TYP.(1) 1.2 2.4 3.2 4.7 0.8 2.1 2.8 4.3 0.1 0.2 0.1 MAX. - - - - 0.5 1.35 1.8 2.7 1.0 2.0 1.0 -40 to +125 MIN. 1.5 3.15 4.2 6.3 - - - - - - - MAX. - - - - 0.5 1.35 1.8 2.7 1.0 2.0 1.0 V V V V V V V V A A A UNIT VCC (V) 2.0 4.5 6.0 9.0 2.0 4.5 6.0 9.0 6.0 10.0 10.0
74HC1G66; 74HCT1G66
TEST CONDITIONS OTHER
VI = VCC or GND VI = VIH or VIL; |VS| = VCC - GND; see Fig.6 VI = VIH or VIL; |VS| = VCC - GND; see Fig.7 VI = VCC or GND; Vis = GND or VCC; Vos = VCC or GND
IS
-
0.1
1.0
-
1.0
A
10.0
ICC
- -
1.0 2.0
10 20
- -
20 40
A A
6.0 10.0
Note 1. All typical values are measured at Tamb = 25 C.
1998 Aug 03
5
Philips Semiconductors
Product specification
Bilateral switch
DC CHARACTERISTICS FOR 74HC1G/74HCT1G66 For 74HC1G66: VCC = 2.0, 4.5, 6.0, 9.0 V; note 1. For 74HCT1G66: VCC = 4.5 V. Tamb (C) SYMBOL PARAMETER MIN. RON ON-resistance (peak) - - - - RON ON-resistance (rail) - - - - RON ON-resistance (rail) - - - - Notes -40 to +85 TYP.(2) - 42 31 23 75 29 23 18 75 35 27 21 MAX. - 118 105 88 - 95 82 70 - 106 94 78 -40 to +125 MIN. - - - - - - - - - - - - MAX. - 142 126 105 - 115 100 80 - 128 113 95 UNIT VCC (V) 2.0 4.5 6.0 9.0 2.0 4.5 6.0 9.0 2.0 4.5 6.0 9.0
74HC1G66; 74HCT1G66
TEST CONDITIONS IS (A) 100 OTHER
Vis = VCC to GND; 1000 VI = VIH or VIL; see Fig.5 1000 1000 100 Vis = GND; 1000 VI = VIH or VIL; see Fig.5 1000 1000 100 Vis = VCC; 1000 VI = VIH or VIL; see Fig.5 1000 1000
1. At supply voltages approaching 2 V, the analog switch ON-resistance becomes extremely non-linear. Therefore it is recommended that these devices be used to transmit digital signals only, when using these supply voltages. 2. All typical values are measured at Tamb = 25 C.
1998 Aug 03
6
Philips Semiconductors
Product specification
Bilateral switch
74HC1G66; 74HCT1G66
HIGH (from enable inputs)
LOW (from enable input) V Y Y Z A A VO = GND or VCC GND
MNA079
Z
Vis = 0 to VCC - GND
Iis GND
MNA078
VI = VCC or GND
Fig.5
Test circuit for measuring ON-resistance (RON).
Fig.6
Test circuit for measuring OFF-state current.
handbook, halfpage
80
MNA081
HIGH (from enable input)
RON () 60 Y A Z VCE = 4.5 V A VO (open circuit) GND
MNA080
40
VI = VCC or GND
6.0 V 9.0 V 20
0 0 2 4 6 6 V (V) 10 is
Fig.8 Fig.7 Test circuit for measuring ON-state current.
Typical ON-resistance (RON) as a function of input voltage (Vis) for Vis = 0 to VCC.
1998 Aug 03
7
Philips Semiconductors
Product specification
Bilateral switch
DC CHARACTERISTICS FOR THE 74HCT1G66 Over recommended operating conditions; voltages are referenced to GND (ground = 0 V). Tamb (C) SYMBOL PARAMETER -40 to +85 MIN. TYP.(1) MAX. VIH VIL II IS HIGH-level input voltage LOW-level input voltage input leakage current analog switch OFF-state current analog switch ON-state current quiescent supply current 2.0 0.1 - - 1.6 1.2 0.1 0.1 - 0.8 1.0 1.0 -40 to +125 MIN. MAX. 2.0 - - - - 0.8 1.0 1.0 V V A A UNIT VCC (V) 4.5 to 5.5 4.5 to 5.5 5.5 5.5
74HC1G66; 74HCT1G66
TEST CONDITIONS OTHER
VI = VCC or GND VI = VIH or VIL; |VS| = VCC - GND; see Fig.6 VI = VIH or VIL; |VS| = VCC - GND; see Fig.7 VI = VCC or GND; Vis = GND or VCC; Vos = VCC or GND VI = VCC - 2.1
IS
-
0.1
1.0
-
1.0
A
5.5
ICC
-
1.0
10.0
-
20
A
4.5 to 5.5
ICC Note
additional supply current per input
-
-
500
-
850
A
4.5 to 5.5
1. All typical values are measured at Tamb = 25 C. AC CHARACTERISTICS FOR 74HC1G66 GND = 0 V; tr = tf = 6.0 ns; CL = 50 pF. Tamb (C) SYMBOL PARAMETER - - - - tPZH/tPZL turn-on time E to Vos - - - - tPHZ/tPLZ turn-off time E to Vos - - - - Note 1. All typical values are measured at Tamb = 25 C. -40 to +85 MIN. TYP.(1) tPHL/tPLH propagation delay Vis to Vos 8 3 2 1 50 16 13 9 27 16 14 12 MAX. 75 15 13 10 125 25 21 16 190 38 33 16 - - - - - - - - - - - - -40 to +125 MIN. MAX. 90 18 15 12 150 30 26 20 225 45 38 20 ns ns ns ns ns ns ns ns ns ns ns ns UNIT VCC (V) 2.0 4.5 6.0 9.0 2.0 4.5 6.0 9.0 2.0 4.5 6.0 9.0 RL = 1 k; CL = 50 pF: see Figs 13 and 14 RL = 1; k;CL = 50 pF; see Figs 13 and 14 WAVEFORMS RL = ; CL = 50 pF; see Fig.12 TEST CONDITIONS
1998 Aug 03
8
Philips Semiconductors
Product specification
Bilateral switch
74HC1G66; 74HCT1G66
AC CHARACTERISTICS FOR 74HCT1G66 GND = 0 V; tr = tf = 6.0 ns; CL = 50 pF. Vis is the input voltage at Y or Z terminal, whichever is assigned as an input. Vos is the output voltage at Y or Z terminal, whichever is assigned as an output. Tamb (C) SYMBOL PARAMETER MIN. tPHL/tPLH propagation delay Vis to Vos turn-on time E to Vos turn-off time E to Vos - -40 to +85 TYP.(1) 3 MAX. 15 -40 to +125 MIN. - MAX. 18 ns UNIT VCC(V) 4.5 WAVEFORMS RL = ; CL = 50 pF; see Fig.12. RL = 1 k; CL = 50 pF; see Figs 15 and 16. RL = 1 k; CL = 50 pF; see Figs 15 and 16. TEST CONDITIONS
tPZH/tPZL
-
15
30
-
36
ns
4.5
tPHZ/tPLZ
-
13
44
-
53
ns
4.5
Note 1. All typical values are measured at Tamb = 25 C. ADDITIONAL AC CHARACTERISTICS FOR THE 74HC1G66/74HCT1G66 Recommended conditions and typical values. GND = 0 V; tr = tf = 6.0 ns. Vis is the input voltage at Y or Z terminal, whichever is assigned as an input. Vos is the output voltage at Y or Z terminal, whichever is assigned as an output. SYMBOL PARAMETER sine-wave distortion f = 1 kHz sine-wave distortion f = 10 kHz switch OFF signal feed-through fmax CS Notes 1. Adjust input voltage Vis is 0 dBm level (0 dBM = 1 mW into 600 ). 2. Adjust input voltage Vis is 0 dBm level at Vos for 1 MHz (0 dBM = 1 mW into 50 ). minimum frequency response (-3 dB) maximum switch capacitance TYP. 0.04 0.02 0.12 0.06 -50 -50 180 200 8 UNIT % % dB MHz pF VCC (V) 4.5 9.0 4.5 9.0 4.5 9.0 4.5 9.0 Vis(p-p) (V) 4.0 8.0 4.0 8.0 note 1 note 2 TEST CONDITIONS RL = 10 k; CL = 50 pF; see Fig.12 RL = 10 k; CL = 50 pF; see Fig.12 RL = 600 ; CL = 50 pF; f = 1 MHz; see Figs 9 and 13 RL = 50 ; CL = 10 pF; see Figs 10 and 11
1998 Aug 03
9
Philips Semiconductors
Product specification
Bilateral switch
74HC1G66; 74HCT1G66
MNA082
handbook, full pagewidth
0
(dB) -20
-40
-60
-80
-100 10
102
103
104
105
f (kHz)
106
Test conditions: VCC = 4.5 V; GND = 0 V; RL = 50 ; RSOURCE = 1k.
Fig.9 Typical switch OFF signal feed-through as a function of frequency.
MNA083
handbook, full pagewidth
5
(dB)
0
-5 10
102
103
104
105
f (kHz)
106
Test conditions: VCC = 4.5 V; GND = 0 V; RL = 50 ; RSOURCE = 1k.
Fig.10 Typical frequency response.
1998 Aug 03
10
Philips Semiconductors
Product specification
Bilateral switch
74HC1G66; 74HCT1G66
handbook, full pagewidth
VCC 2RL Y/Z 2RL channel ON
MNA084
0.1 F Vis sine-wave
Z/Y CL dB
Vos
GND
Adjust input voltage to obtain 0 dBm at Vos when fin = 1 MHz. After set-up, frequency of fin is increased to obtain a reading of -3 db at Vos.
Fig.11 Test circuit for measuring minimum frequency response.
handbook, full pagewidth
VCC 2RL Y/Z Z/Y DISTORTION METER GND
MNA085
10 F Vis fin = 1 kHz sine-wave
Vos
2RL channel ON
CL
Fig.12 Test circuit for measuring sine-wave distortion.
handbook, full pagewidth
VCC 2RL Y/Z 2RL channel OFF
MNA086
0.1 F Vis
Z/Y CL dB
Vos
GND
Fig.13 Test circuit for measuring switch OFF signal feed-through.
1998 Aug 03
11
Philips Semiconductors
Product specification
Bilateral switch
AC WAVEFORMS
74HC1G66; 74HCT1G66
handbook, halfpageVI
VI
Vis GND
VM(1)
E INPUT GND
VM(1)
tPLZ
tPZL
tPLH VOH(2) Vos VOL(2) VM(1)
tPHL
VCC OUTPUT LOW-to-OFF OFF-to-LOW tPHZ VM(1) VX(2) tPZH VY(3) VM(1) GND outputs enabled outputs disabled outputs enabled
MNA088
MNA087
OUTPUT HIGH-to-OFF OFF-to-HIGH
(1) HC1G VM = 50% HCT1G VM = 1.3 V. (2) VOL and VOH are the typical output voltage drop that occur with the output load.
(1) HC1G VM = 50%; VI = GND to VCC HCT1G VM = 1.3 V; VI = GND to 3.0 V. (2) VX = 10% of signal amplitude. (3) VY = 90% of signal amplitude.
Fig.14 The input (Vis) to output (Vos) propagation delays.
Fig.15 The turn-on and turn-off times.
handbook, halfpage
VCC VI D.U.T. RT CL 50 pF VO RL = 1 k S1 VCC open
tW 90% NEGATIVE INPUT PULSE 10% tTHL (tf)
MNA090
AMPLITUDE VM
(1)
PULSE GENERATOR
0V tTLH (tr) tTHL (tf) AMPLITUDE VM
(1)
tTLH (tr) 90% POSITIVE INPUT PULSE
CL = load capacitance including jig and probe capacitance (see AC CHARACTERISTICS for values) RT = termination resistance should be equal to the output impedance ZO of the pulse generator.
10% tW
0V
MNA089
TEST tPLH/tPHL tPLZ/tPZL tPHZ/tPZH
S1 open VCC GND
tr = tf = 6 ns, when measuring fmax, there is no constraint on tr, tf with 50% duty factor. (1) HC1G: VM = 50%; VI = GND to VCC HCT1G: VM = 1.3 V; VI = GND to 3.0 V.
Fig.16 Test circuit for measuring AC performance.
Fig.17 Input pulse definitions.
1998 Aug 03
12
Philips Semiconductors
Product specification
Bilateral switch
PACKAGE OUTLINE Plastic surface mounted package; 5 leads
74HC1G66; 74HCT1G66
SOT353
D
B
E
A
X
y
HE
vMA
5
4
Q
A
A1
1
e1 e
2
bp
3
wM B detail X Lp
c
0
1 scale
2 mm
DIMENSIONS (mm are the original dimensions) UNIT mm A 1.1 0.8 A1 max 0.1 bp 0.30 0.20 c 0.25 0.10 D 2.2 1.8 E (2) 1.35 1.15 e 1.3 e1 0.65 HE 2.2 2.0 Lp 0.45 0.15 Q 0.25 0.15 v 0.2 w 0.2 y 0.1
OUTLINE VERSION SOT353
REFERENCES IEC JEDEC EIAJ SC-88A
EUROPEAN PROJECTION
ISSUE DATE 97-02-28
1998 Aug 03
13
Philips Semiconductors
Product specification
Bilateral switch
SOLDERING Introduction There is no soldering method that is ideal for all IC packages. Wave soldering is often preferred when through-hole and surface mounted components are mixed on one printed-circuit board. However, wave soldering is not always suitable for surface mounted ICs, or for printed-circuits with high population densities. In these situations reflow soldering is often used. This text gives a very brief insight to a complex technology. A more in-depth account of soldering ICs can be found in our "Data Handbook IC26; Integrated Circuit Packages" (order code 9398 652 90011). Reflow soldering Reflow soldering techniques are suitable for all SO packages. Reflow soldering requires solder paste (a suspension of fine solder particles, flux and binding agent) to be applied to the printed-circuit board by screen printing, stencilling or pressure-syringe dispensing before package placement. Several techniques exist for reflowing; for example, thermal conduction by heated belt. Dwell times vary between 50 and 300 seconds depending on heating method. Typical reflow temperatures range from 215 to 250 C. Preheating is necessary to dry the paste and evaporate the binding agent. Preheating duration: 45 minutes at 45 C. Wave soldering
74HC1G66; 74HCT1G66
Wave soldering techniques can be used for all SO packages if the following conditions are observed: * A double-wave (a turbulent wave with high upward pressure followed by a smooth laminar wave) soldering technique should be used. * The longitudinal axis of the package footprint must be parallel to the solder flow. * The package footprint must incorporate solder thieves at the downstream end. During placement and before soldering, the package must be fixed with a droplet of adhesive. The adhesive can be applied by screen printing, pin transfer or syringe dispensing. The package can be soldered after the adhesive is cured. Maximum permissible solder temperature is 260 C, and maximum duration of package immersion in solder is 10 seconds, if cooled to less than 150 C within 6 seconds. Typical dwell time is 4 seconds at 250 C. A mildly-activated flux will eliminate the need for removal of corrosive residues in most applications. Repairing soldered joints Fix the component by first soldering two diagonallyopposite end leads. Use only a low voltage soldering iron (less than 24 V) applied to the flat part of the lead. Contact time must be limited to 10 seconds at up to 300 C. When using a dedicated tool, all other leads can be soldered in one operation within 2 to 5 seconds between 270 and 320 C.
1998 Aug 03
14
Philips Semiconductors
Product specification
Bilateral switch
DEFINITIONS Data sheet status Objective specification Preliminary specification Product specification Limiting values
74HC1G66; 74HCT1G66
This data sheet contains target or goal specifications for product development. This data sheet contains preliminary data; supplementary data may be published later. This data sheet contains final product specifications.
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale.
1998 Aug 03
15
Philips Semiconductors - a worldwide company
Argentina: see South America Australia: 34 Waterloo Road, NORTH RYDE, NSW 2113, Tel. +61 2 9805 4455, Fax. +61 2 9805 4466 Austria: Computerstr. 6, A-1101 WIEN, P.O. Box 213, Tel. +43 160 1010, Fax. +43 160 101 1210 Belarus: Hotel Minsk Business Center, Bld. 3, r. 1211, Volodarski Str. 6, 220050 MINSK, Tel. +375 172 200 733, Fax. +375 172 200 773 Belgium: see The Netherlands Brazil: see South America Bulgaria: Philips Bulgaria Ltd., Energoproject, 15th floor, 51 James Bourchier Blvd., 1407 SOFIA, Tel. +359 2 689 211, Fax. +359 2 689 102 Canada: PHILIPS SEMICONDUCTORS/COMPONENTS, Tel. +1 800 234 7381 China/Hong Kong: 501 Hong Kong Industrial Technology Centre, 72 Tat Chee Avenue, Kowloon Tong, HONG KONG, Tel. +852 2319 7888, Fax. +852 2319 7700 Colombia: see South America Czech Republic: see Austria Denmark: Prags Boulevard 80, PB 1919, DK-2300 COPENHAGEN S, Tel. +45 32 88 2636, Fax. +45 31 57 0044 Finland: Sinikalliontie 3, FIN-02630 ESPOO, Tel. +358 9 615800, Fax. +358 9 61580920 France: 51 Rue Carnot, BP317, 92156 SURESNES Cedex, Tel. +33 1 40 99 6161, Fax. +33 1 40 99 6427 Germany: Hammerbrookstrae 69, D-20097 HAMBURG, Tel. +49 40 23 53 60, Fax. +49 40 23 536 300 Greece: No. 15, 25th March Street, GR 17778 TAVROS/ATHENS, Tel. +30 1 4894 339/239, Fax. +30 1 4814 240 Hungary: see Austria India: Philips INDIA Ltd, Band Box Building, 2nd floor, 254-D, Dr. Annie Besant Road, Worli, MUMBAI 400 025, Tel. +91 22 493 8541, Fax. +91 22 493 0966 Indonesia: PT Philips Development Corporation, Semiconductors Division, Gedung Philips, Jl. Buncit Raya Kav.99-100, JAKARTA 12510, Tel. +62 21 794 0040 ext. 2501, Fax. +62 21 794 0080 Ireland: Newstead, Clonskeagh, DUBLIN 14, Tel. +353 1 7640 000, Fax. +353 1 7640 200 Israel: RAPAC Electronics, 7 Kehilat Saloniki St, PO Box 18053, TEL AVIV 61180, Tel. +972 3 645 0444, Fax. +972 3 649 1007 Italy: PHILIPS SEMICONDUCTORS, Piazza IV Novembre 3, 20124 MILANO, Tel. +39 2 6752 2531, Fax. +39 2 6752 2557 Japan: Philips Bldg 13-37, Kohnan 2-chome, Minato-ku, TOKYO 108-8507, Tel. +81 3 3740 5130, Fax. +81 3 3740 5077 Korea: Philips House, 260-199 Itaewon-dong, Yongsan-ku, SEOUL, Tel. +82 2 709 1412, Fax. +82 2 709 1415 Malaysia: No. 76 Jalan Universiti, 46200 PETALING JAYA, SELANGOR, Tel. +60 3 750 5214, Fax. +60 3 757 4880 Mexico: 5900 Gateway East, Suite 200, EL PASO, TEXAS 79905, Tel. +9-5 800 234 7381 Middle East: see Italy Netherlands: Postbus 90050, 5600 PB EINDHOVEN, Bldg. VB, Tel. +31 40 27 82785, Fax. +31 40 27 88399 New Zealand: 2 Wagener Place, C.P.O. Box 1041, AUCKLAND, Tel. +64 9 849 4160, Fax. +64 9 849 7811 Norway: Box 1, Manglerud 0612, OSLO, Tel. +47 22 74 8000, Fax. +47 22 74 8341 Pakistan: see Singapore Philippines: Philips Semiconductors Philippines Inc., 106 Valero St. Salcedo Village, P.O. Box 2108 MCC, MAKATI, Metro MANILA, Tel. +63 2 816 6380, Fax. +63 2 817 3474 Poland: Ul. Lukiska 10, PL 04-123 WARSZAWA, Tel. +48 22 612 2831, Fax. +48 22 612 2327 Portugal: see Spain Romania: see Italy Russia: Philips Russia, Ul. Usatcheva 35A, 119048 MOSCOW, Tel. +7 095 755 6918, Fax. +7 095 755 6919 Singapore: Lorong 1, Toa Payoh, SINGAPORE 319762, Tel. +65 350 2538, Fax. +65 251 6500 Slovakia: see Austria Slovenia: see Italy South Africa: S.A. PHILIPS Pty Ltd., 195-215 Main Road Martindale, 2092 JOHANNESBURG, P.O. Box 7430 Johannesburg 2000, Tel. +27 11 470 5911, Fax. +27 11 470 5494 South America: Al. Vicente Pinzon, 173, 6th floor, 04547-130 SAO PAULO, SP, Brazil, Tel. +55 11 821 2333, Fax. +55 11 821 2382 Spain: Balmes 22, 08007 BARCELONA, Tel. +34 93 301 6312, Fax. +34 93 301 4107 Sweden: Kottbygatan 7, Akalla, S-16485 STOCKHOLM, Tel. +46 8 5985 2000, Fax. +46 8 5985 2745 Switzerland: Allmendstrasse 140, CH-8027 ZURICH, Tel. +41 1 488 2741 Fax. +41 1 488 3263 Taiwan: Philips Semiconductors, 6F, No. 96, Chien Kuo N. Rd., Sec. 1, TAIPEI, Taiwan Tel. +886 2 2134 2865, Fax. +886 2 2134 2874 Thailand: PHILIPS ELECTRONICS (THAILAND) Ltd., 209/2 Sanpavuth-Bangna Road Prakanong, BANGKOK 10260, Tel. +66 2 745 4090, Fax. +66 2 398 0793 Turkey: Talatpasa Cad. No. 5, 80640 GULTEPE/ISTANBUL, Tel. +90 212 279 2770, Fax. +90 212 282 6707 Ukraine: PHILIPS UKRAINE, 4 Patrice Lumumba str., Building B, Floor 7, 252042 KIEV, Tel. +380 44 264 2776, Fax. +380 44 268 0461 United Kingdom: Philips Semiconductors Ltd., 276 Bath Road, Hayes, MIDDLESEX UB3 5BX, Tel. +44 181 730 5000, Fax. +44 181 754 8421 United States: 811 East Arques Avenue, SUNNYVALE, CA 94088-3409, Tel. +1 800 234 7381 Uruguay: see South America Vietnam: see Singapore Yugoslavia: PHILIPS, Trg N. Pasica 5/v, 11000 BEOGRAD, Tel. +381 11 625 344, Fax.+381 11 635 777 Internet: http://www.semiconductors.philips.com
For all other countries apply to: Philips Semiconductors, International Marketing & Sales Communications, Building BE-p, P.O. Box 218, 5600 MD EINDHOVEN, The Netherlands, Fax. +31 40 27 24825 (c) Philips Electronics N.V. 1998
SCA60
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights.
Printed in The Netherlands
245106/00/01/pp16
Date of release: 1998 Aug 03
Document order number:
9397 750 03587

▲Up To Search▲

Price & Availability of 74HC1G66GW

	To Download 74HC1G66GW Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .